2003 Jun 30

5

Philips Semiconductors

Product specification

Quad 2-input NAND gate

74HC00; 74HCT00

RECOMMENDED OPERATING CONDITIONS

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134); voltages are referenced to GND (ground = 0 V).

Note

1. For DIP14 packages: above 70

°C derate linearly with 12 mW/K.

For SO14 packages: above 70

°C derate linearly with 8 mW/K.

For SSOP14 and TSSOP14 packages: above 60

°C derate linearly with 5.5 mW/K.

For DHVQFN14 packages: above 60

°C derate linearly with 4.5 mW/K.

SYMBOL

PARAMETER

CONDITIONS

74HC00

74HCT00

UNIT

MIN.

TYP.

MAX.

MIN.

TYP.

MAX.

supply voltage

2.0

5.0

6.0

4.5

5.0

5.5

V

input voltage

0

−

0

−

V

output voltage

0

−

0

−

V

operating ambient

temperature

see DC and AC

characteristics per

device

−40

+25

+125

−40

+25

+125

°C

input rise and fall times

−−

1000

−−−

ns

−

6.0

500

−

6.0

500

ns

−−

400

−−−

ns

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

supply voltage

−0.5

+7.0

V

input diode current

−±20

mA

output diode current

−±20

mA

output source or sink

current

−±25

mA

−±50

mA

storage temperature

−65

+150

°C

power dissipation

−

500

mW