ESDA6V1P6 datasheet(3/8 Pages) STMICROELECTRONICS

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ESDA6V1P6

3/8

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

100

125

150

[T initial] / P

[T initial=25°C)

T (°C)

Fig. 1: Relative variation of peak pulse power

versus initial junction temperature.

100

1000

100

(W)

T (µs)

T initial=25°C

Fig. 2: Peak pulse power versus exponential pulse

duration.

0.1

1.0

10.0

100.0

20304050

6070

(A)

(V)

t =2.5µs

T initial=25°C

Fig. 3: Clamping voltage versus peak pulse

current (typical values, rectangular waveform).

1.E-03

1.E-02

1.E-01

1.E+00

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

(A)

(V)

T =125°C

T =25°C

Fig. 4: Forward voltage drop versus peak forward

current (typical values).

234

C(pF)

V (V)

F=1MHz

=30mV

T =25°C

OSC

RMS

Fig. 5: Junction capacitance versus reverse

voltage applied (typical values).

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

100

125

I [T ] / I [T =25°C]

V =3V

T (°C)

Fig. 6: Relative variation of leakage current versus

junction temperature (typical values).

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