INA210CIRSWT datasheet(20/44 Pages) TI1

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Device

V+

OUT

GND

IN-

IN+

BYPASS

Shutdown

Control

REF

Reference

Voltage

Supply

Load

SHUNT

Output

1 MW

PROTECT

10 W

PROTECT

10 W

1 MW

Device

V+

OUT

GND

IN-

IN+

BYPASS

Shutdown

Control

REF

Reference

Voltage

Supply

Load

SHUNT

Output

1 MW

PROTECT

10 W

PROTECT

10 W

1 MW

INA210, INA211, INA212, INA213, INA214, INA215

SBOS437J – MAY 2008 – REVISED FEBRUARY 2017

www.ti.com

Product Folder Links: INA210 INA211 INA212 INA213 INA214 INA215

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Figure 27. INA21x Transient Protection Using Dual Zener Diodes

In the event that low-power zeners do not have sufficient transient absorption capability and a higher power

transzorb must be used, the most package-efficient solution then involves using a single transzorb and back-to-

back diodes between the device inputs. The most space-efficient solutions are dual series-connected diodes in a

single SOT-523 or SOD-523 package. This method is shown in Figure 28. In either of these examples, the total

board area required by the INA21x with all protective components is less than that of an SO-8 package, and only

slightly greater than that of an MSOP-8 package.

Figure 28. INA21x Transient Protection Using a Single Transzorb and Input Clamps

INA210CIRSWT Datasheet(PDF) 20 Page - Texas Instruments

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