SIP41111 datasheet(4/10 Pages) VISHAY

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Document Number: 74292

S-61214–Rev. A, 17-Jul-06

Vishay Siliconix

SiP41111

TIMING DIAGRAMS

ELECTRICAL SPECIFICATIONS V

DD = VHB = 12 V, VSS = VHS = 0 V, no load on LO or HO, unless otherwise specified

Parameter

Symbol

Test Conditions

TJ = 25 °C

Unit

Min

Typ

Max

Lower Turn-Off Propagation

Delay (LI Falling to LO Falling)

tLPHL

-18

Upper Turn-Off Propagation

Delay (HI Falling to HO Falling)

tHPHL

-18

Lower Turn-On Propagation Delay

(LI Rising to LO Rising)

tLPLH

-23-

Upper Turn-On Propagation Delay

(HI Rising to HO Rising)

tHPLH

-23-

Delay Matching: Lower Turn-On and

Upper Turn-Off

tMON

-5.5

Delay Matching: Lower Turn-Off and

Upper Turn-On

tMOFF

-6.5

Low-side Output Rise Time

tRCL

CL = 1000 pF

-14-

High-side Output Rise Time

tRCH

-13-

Low-side Output Fall Time

tFCL

-15-

High-side Output Fall Time

tFCH

-15-

Either Output Rise Time

Driving DMOS

tRD

CL = Si7456DP

Ciss = 3100 pF

-27-

Either Output Fall Time

Driving DMOS

tFD

CL = Si7456DP

Ciss = 3100 pF

-30-

Minimum Input Pulse Width

that Changes the Output

tPW

Bootstrap Diode Turn-On or Turn-Off

Time

tBS

-10-

HI, LI

HO, LO

t HPLH ,t LPLH

t HPHL,t LPHL

t MON

t MOFF

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