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STPSC12H065-Y Datasheet(PDF) 1 Page - STMicroelectronics

Part # STPSC12H065-Y
Description  Dedicated to PFC applications
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STPSC12H065-Y Datasheet(HTML) 1 Page - STMicroelectronics

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October 2016
DocID026617 Rev 4
1/9
This is information on a product in full production.
www.st.com
STPSC12H065-Y
Automotive 650 V power Schottky silicon carbide diode
Datasheet - production data
Features
AEC-Q101 qualified
No or negligible reverse recovery
Switching behavior independent of
temperature
Dedicated to PFC applications
High forward surge capability
PPAP capable
ECOPACK® 2 compliant component
Description
The SiC diode is an ultra high performance
power Schottky diode. It is manufactured using a
silicon carbide substrate. The wide band gap
material allows the design of a Schottky diode
structure with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimal
capacitive turn-off behavior is independent of
temperature.
Especially suited for use in PFC applications, this
ST SiC diode will boost performance in hard
switching conditions. Its high forward surge
capability ensures good robustness during
transient phases.
Table 1: Device summary
Symbol
Value
IF(AV)
12 A
VRRM
650 V
Tj (max.)
175 °C
A
K
A
K
K
TO-220AC


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