STW7N90K5 datasheet(5/12 Pages) STMICROELECTRONICS

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STW7N90K5

Electrical characteristics

DocID029863 Rev 1

5/12

Table 7: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD= 450 V, ID = 3.5 A, RG

= 4.7 Ω

VGS = 10 V

(see Figure 14: "Test circuit for

resistive load switching times" and

Figure 19: "Switching time

waveform")

13.2

Rise time

14.2

td(off)

Turn-off delay time

31.6

Fall time

14.7

Table 8: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain

current

ISDM(1)

Source-drain

current (pulsed)

VSD(2)

Forward on

voltage

ISD = 7 A, VGS = 0 V

1.5

trr

Reverse recovery

time

ISD = 7 A, di/dt = 100 A/µs,

VDD = 60 V

(see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

352

Qrr

Reverse recovery

charge

3.63

µC

IRRM

Reverse recovery

current

20.6

trr

Reverse recovery

time

ISD = 7 A, di/dt = 100 A/µs VDD = 60

V, Tj = 150 °C

(see Figure 16: "Test circuit for

inductive load switching and diode

recovery times")

525

Qrr

Reverse recovery

charge

4.94

µC

IRRM

Reverse recovery

current

18.8

Notes:

(1)Pulse width limited by safe operating area

(2)Pulsed: pulse duration = 300 µs, duty cycle 1.5%

Table 9: Gate-source Zener diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)GSO

Gate-source

breakdown

voltage

IGS= ± 1mA, ID= 0 A

±30

The built-in back-to-back Zener diodes are specifically designed to enhance the ESD

performance of the device. The Zener voltage facilitates efficient and cost-effective device

integrity protection, thus eliminating the need for additional external componentry.

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