STB150N3LH6 datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STB150N3LH6

4/15

Doc ID 023351 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 5.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS= 0)

ID = 250 µA

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V

VDS = 30 V,T c = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 20 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

2.5

RDS(on)

Static drain-source on-

resistance

VGS = 10 V, ID = 40 A

2.4

3.0

Ω

VGS = 5 V, ID = 40 A

3.2

4.0

Ω

Table 6.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f=1 MHz,

VGS = 0

3800

725

420

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 15 V, ID = 80 A

VGS = 10 V

(see Figure 14)

Gate input resistance

f = 1 MHz gate bias bias =

0 test signal level = 20

mV open drain

-1.5

Ω

Table 7.

Switching on/off (inductive load)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

Rise time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

td(off)

Turn-off delay time

Fall time

VDD = 15 V, ID = 40 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 15)

100

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Product(s)

- Obsolete

Product(s)

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