STD30N10F7 datasheet(1/16 Pages) STMICROELECTRONICS

Part #	STD30N10F7

Description	N-channel 100 V, 0.02 Ω typ., 32 A STripFET™F7 Power MOSFET in a DPAK package

PDF	16 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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This is information on a product in full production.

January 2016

DocID025607 Rev 3

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STD30N10F7

N-channel 100 V, 0.02

Ω typ., 32 A STripFET™ F7

Power MOSFET in a DPAK package

Datasheet

− production data

Figure 1. Internal schematic diagram

Features

• Among the lowest RDS(on) on the market

• Excellent figure of merit (FoM)

• Low Crss/Ciss ratio for EMI immunity

• High avalanche ruggedness

Applications

• Switching applications

Description

This N-channel Power MOSFET utilizes

STripFET™ F7 technology with an enhanced

trench gate structure that results in very low on-

state resistance, while also reducing internal

capacitance and gate charge for faster and more

efficient switching.

DPAK

1

3

TAB

Order code

VDS

RDS(on) max

ID

PTOT

STD30N10F7 100 V

0.024 Ω

32 A 50 W

Table 1. Device summary

Order code

Marking

Package

Packing

STD30N10F7

30N10F7

DPAK

Tape and reel

www.st.com

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STD30N10F7 Datasheet(PDF) 1 Page - STMicroelectronics

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