STD30N10F7 datasheet(4/16 Pages) STMICROELECTRONICS

4 / 16 page

Electrical characteristics

STD30N10F7

4/16

DocID025607 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4. On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

VGS = 0, ID = 250 µA

100

IDSS

Zero gate voltage

drain current

VGS = 0, VDS = 100 V

µA

VGS = 0,

VDS = 100 V, TC=125 °C

100

µA

IGSS

Gate-body leakage

current

VDS = 0, VGS = +20 V

100

VGS(th)

Gate threshold voltage VDS = VGS, ID = 250 µA

2.5

4.5

RDS(on)

Static drain-source

on- resistance

VGS = 10 V, ID = 16 A

0.02

0.024

Ω

Table 5. Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 50 V, f = 1 MHz,

VGS = 0

1270

Coss

Output capacitance

290

-pF

Crss

Reverse transfer

capacitance

-pF

Total gate charge

VDD = 50 V, ID = 32 A,

VGS = 10 V

(see Figure 14)

-19-

Qgs

Gate-source charge

Qgd

Gate-drain charge

4.5

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 50 V, ID = 16 A,

RG = 4.7 Ω, VGS = 10 V

(see Figure 13)

-12-

Rise time

17.5

td(off)

Turn-off delay time

Fall time

5.6

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