PD84006-E datasheet(1/11 Pages) STMICROELECTRONICS

Part #	PD84006-E

Description	Excellent thermal stability

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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1 / 11 page

This is information on a product in full production.

May 2012

Doc ID 16087 Rev 2

1/11

11

PD84006-E

RF power transistor, LdmoST plastic family

N-channel enhancement-mode lateral MOSFETs

Datasheet

−production data

Features

■ Excellent thermal stability

■ Common source configuration

■ Broadband performances: POUT = 6 W with 13

dB gain @ 870 MHz

■ Plastic package

■ ESD protection

■ In compliance with the 2002/95/EC European

directive

Description

The PD84006-E is a common source N-channel,

enhancement-mode lateral field-effect RF power

transistor. It is designed for high gain, broadband

commercial and industrial applications. It

operates at 7 V in common source mode at

frequencies of up to 1 GHz boasts the excellent

gain, linearity and reliability of ST’s latest LDMOS

technology mounted in the first true SMD plastic

RF power package, PowerSO-10RF ’s superior

linearity performance makes it an ideal solution

for portable radio and UHF RFID reader. The

PowerSO-10 plastic package, designed to offer

high reliability, is the first ST JEDEC approved,

high power SMD package. It has been specially

optimized for RF needs and offers excellent RF

performances and ease of assembly.

Figure 1.

Pin connections

PowerSO-10RF

(formed lead)

Gate

Source

Drain

Table 1.

Device summary

Order code

Package

Packaging

PD84006-E

PowerSO-10RF (formed lead)

Tube

www.st.com

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PD84006-E Datasheet(PDF) 1 Page - STMicroelectronics

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