STB15N65M5 datasheet(3/19 Pages) STMICROELECTRONICS

3 / 19 page

STB15N65M5, STD15N65M5

Electrical ratings

Doc ID 023207 Rev 1

3/19

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

Drain current (continuous) at TC = 100 °C

6.9

IDM

(1)

Drain current (pulsed)

PTOT

Total dissipation at TC = 25 °C

dv/dt (1)

ISD ≤ 11 A, di/dt ≤400 A/µs; VDD = 400 V, VDS(peak) < V(BR)DSS

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

D2PAK

DPAK

Rthj-case Thermal resistance junction-case max

1.47

°C/W

Rthj-pcb

(1)

When mounted on 1 inch² FR-4, 2 Oz copper board.

Thermal resistance junction-pcb max

°C/W

Table 4.

Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetetive or not repetetive

(pulse width limited by Tjmax )

2.5

EAS

Single pulse avalanche energy (starting

TJ = 25 °C, ID= IAR; VDD=50 V)

160

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