STP17N62K3 datasheet(3/17 Pages) STMICROELECTRONICS

3 / 17 page

STF17N62K3, STP17N62K3, STW17N62K3

Electrical ratings

Doc ID 15046 Rev 2

3/17

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220

TO-247

TO-220FP

VDS

Drain-source voltage (VGS = 0)

620

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

15.5

15.5 (1)

Limited only by temperature allowed.

Drain current (continuous) at TC = 100 °C

10 (1)

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

62 (1)

PTOT

Total dissipation at TC = 25 °C

190

IAR

(3)

Pulse width limited by Tj max.

Avalanche current, repetitive or not-

repetitive

15.5

EAS

(4)

Starting Tj = 25°C, ID = IAR, VDD = 50V.

Single pulse avalanche energy

260

Derating factor

1.52

0.32

W/°C

dv/dt (5)

ISD ≤ 15.5 A, di/dt ≤ 400 A/µs, VDD = 80% V(BR)DSS, VDS peak < V(BR)DSS.

Peak diode recovery voltage slope

V/ns

VISO

Insulation withstand voltage (RMS) from all

three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

TO-220FP

TO-220

TO-247

Unit

Rthj-case Thermal resistance junction-case max

3.13

0.66

°C/W

Rthj-amb Thermal resistance junction-ambient max

62.5

°C/W

Maximum lead temperature for soldering

purpose

300

°C

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