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STFH10N60M2 Datasheet(PDF) 1 Page - STMicroelectronics

Part # STFH10N60M2
Description  Extremely low gate charge
PDF  12 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STFH10N60M2 Datasheet(HTML) 1 Page - STMicroelectronics

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August 2016
DocID029418 Rev 3
1/12
This is information on a product in full production.
www.st.com
STFH10N60M2
N-
channel 600 V, 0.55 Ω typ., 7.5 A MDmesh™ M2
Power MOSFET in a TO-220FP wide creepage package
Datasheet - production data
Figure 1: Internal schematic diagram
Features
Order code
VDS @ TJmax
RDS(on) max
ID
STFH10N60M2
650 V
0.60 Ω
7.5 A
Extremely low gate charge
Excellent output capacitance (COSS) profile
100% avalanche tested
Zener-protected
Wide creepage distance of 4.25 mm
between the pins
Applications
Switching applications
LLC converters, resonant converters
Description
This device is an N-channel Power MOSFET
developed using MDmesh™ M2 technology.
Thanks to its strip layout and an improved vertical
structure, the device exhibits low on-resistance
and optimized switching characteristics,
rendering it suitable for the most demanding high
efficiency converters.
The TO-220FP wide creepage package provides
increased surface insulation for Power MOSFETs
to prevent failure due to arcing, which can occur
in polluted environments.
Table 1: Device summary
Order code
Marking
Package
Packing
STFH10N60M2
10N60M2
TO-220FP wide creepage
Tube
AM15572v1_no_tab
D(2)
G(1)
S(3)


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