STFH10N60M2 datasheet(3/12 Pages) STMICROELECTRONICS

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STFH10N60M2

Electrical ratings

DocID029418 Rev 3

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Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 25

Drain current (continuous) at TC = 25 °C

7.5(1)

Drain current (continuous) at TC = 100 °C

4.9(1)

IDM (2)

Drain current (pulsed)

30(1)

PTOT

Total dissipation at TC = 25 °C

dv/dt (3)

Peak diode recovery voltage slope

V/ns

dv/dt (4)

MOSFET dv/dt ruggedness

V/ns

VISO

Insulation withstand voltage (RMS) from all three leads to external

heat sink (t = 1 s; TC = 25 °C)

2500

Tstg

Storage temperature range

- 55 to 150

°C

Operating junction temperature range

Notes:

(1)Limited by maximum junction temperature.

(2)Pulse width limited by safe operating area.

(3)ISD ≤ 7.5 A, di/dt ≤ 400 A/µs; VDSpeak < V(BR)DSS, VDD = 400 V

(4)VDS ≤ 480 V

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

Avalanche current, repetitive or not repetitive (pulse width

limited by Tjmax)

2.5

EAS

Single pulse avalanche energy (starting Tj=25 °C, ID= IAR;

VDD=50 V)

110

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