STW45N65M5 datasheet(3/18 Pages) STMICROELECTRONICS

Part #	STW45N65M5

Description	N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages

PDF	18 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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3 / 18 page

DocID024049 Rev 2

3/18

STFW45N65M5, STW45N65M5, STWA45N65M5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-3PF

TO-247,

TO-247 long leads

Gate-source voltage

± 25

Drain current (continuous) at T

= 25 °C

Drain current (continuous) at T

= 100 °C

(1)

Limited by maximum junction temperature

Drain current (pulsed)

140

TOT

Total dissipation at T

= 25 °C

210

dv/dt

(2)

≤ 35 A, di/dt ≤ 400 A/μs, V

DS(Peak)

< V

(BR)DSS

, V

= 400 V

Peak diode recovery voltage slope

V/ns

dv/dt

(3)

< 520 V

MOSFET dv/dt ruggedness

V/ns

ISO

Insulation withstand voltage (RMS) from all three

leads to external heat sink (t=1 s; Tc=25°C)

3500

stg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

TO-3PF

TO-247,

TO-247 long leads

thj-case

Thermal resistance junction-case max

2.2

0.6

°C/W

thj-amb

Thermal resistance junction-ambient max

°C/W

Table 4. Avalanche characteristics

Symbol

Parameter

Value

Unit

Avalanche current, repetitive or not repetitive

(pulse width limited by T

jmax

)

Single pulse avalanche energy (starting t

=25°C,

= I

; V

=50)

810

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