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STW45N65M5 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STW45N65M5
Description  N-channel 650 V, 35 A, 0.067 Ω typ., MDmesh™ V Power MOSFETs in TO-3PF, TO-247 and TO-247 long leads packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STW45N65M5 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID024049 Rev 2
5/18
STFW45N65M5, STW45N65M5, STWA45N65M5
Electrical characteristics
18
Table 7. Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max
Unit
t
d
(v)
Voltage delay time
V
DD
= 400 V, I
D
= 23 A,
R
G
= 4.7
Ω, V
GS
= 10 V
(see
Figure 19 and
Figure 22)
-79.5
-
ns
t
r
(v)
Voltage rise time
-
11
-
ns
t
f
(i)
Current fall time
-
9.3
-
ns
t
c
(off)
Crossing time
-
16
-
ns
Table 8. Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
Source-drain current
-
35
A
I
SDM
(1)
1.
Pulse width limited by safe operating area.
Source-drain current (pulsed)
-
140
A
V
SD
(2)
2.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 35 A, V
GS
= 0
-
1.5
V
t
rr
Reverse recovery time
I
SD
= 35 A, di/dt = 100 A/μs
V
DD
= 100 V (see
Figure 19)
-
392
ns
Q
rr
Reverse recovery charge
-
7.4
μC
I
RRM
Reverse recovery current
-
38
A
t
rr
Reverse recovery time
I
SD
= 35 A, di/dt = 100 A/μs
V
DD
= 100 V, T
j
= 150 °C
(see
Figure 19)
-
468
ns
Q
rr
Reverse recovery charge
-
9.7
μC
I
RRM
Reverse recovery current
-
42
A



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