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STGIPL30C60-H Datasheet(PDF) 8 Page - STMicroelectronics |
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STGIPL30C60-H Datasheet(HTML) 8 Page - STMicroelectronics |
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8 / 24 page ![]() Electrical characteristics STGIPL30C60-H 8/24 DocID024585 Rev 4 3 Electrical characteristics T j = 25 °C unless otherwise specified. Note: ton and toff include the propagation delay time of the internal drive. tC(ON) and tC(OFF) are the switching time of IGBT itself under the internally given gate driving condition. Table 7. Inverter part Symbol Parameter Test condition Value Unit Min. Typ. Max. V CE(sat) Collector-emitter saturation voltage V CC = V Boot = 15 V, V IN (1) = 0 ÷ 5 V, I C = 30 A -1.9 V V CC = V Boot = 15 V, V IN (1) = 0 ÷ 5 V, I C = 30 A, T j = 125 °C -2.2 I CES Collector-cut off current (V IN (1) =0 “logic state”) V CE = 550 V V CC = V boot = 15 V - 150 μA V F Diode forward voltage V IN (1) = 0 “logic state”, I C = 30 A - 2.0 2.3 V Inductive load switching time and energy t on Turn-on time V DD = 300 V, V CC = V boot = 15 V, V IN (1) = 0 ÷ 5 V, I C = 30 A (see Figure 3) -440 ns t c(on) Crossover time (on) - 190 t off Turn-off time - 780 t c(off) Crossover time (off) - 135 t rr Reverse recovery time - 100 E on Turn-on switching losses - 870 μJ E off Turn-off switching losses - 740 1. Applied between HIN i LIN i and GND for i = U, V, W. |
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