STL7N80K5 datasheet(3/17 Pages) STMICROELECTRONICS

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STL7N80K5

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

± 30

(1)

The value is rated according to Rthj-case and limited by package.

Drain current (continuous) at TC = 25 °C

3.6

(1)

Drain current (continuous) at TC = 100 °C

2.3

IDM

(1),(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

(3)

Pulse width limited by Tjmax

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

(4)

Starting Tj=25 °C, ID=IAR, VDD=50 V

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

dv/dt (5)

ISD ≤ 3.6 A, di/dt ≤ 100 A/µs, VDS(peak) ≤ V(BR)DSS

Peak diode recovery voltage slope

4.5

V/ns

dv/dt (6)

VDS ≤ 640 V

MOSFET dv/dt ruggedness

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

°C/W

Rthj-amb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu.

Thermal resistance junction-amb max

°C/W

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