STGD10NC60S datasheet(6/18 Pages) STMICROELECTRONICS

6 / 18 page

Electrical characteristics

STGD10NC60S, STGP10NC60S

6/18

Doc ID 15931 Rev 2

Figure 6.

Normalized breakdown voltage vs.

temperature

Figure 7.

Normalized gate threshold voltage

vs. temperature

Figure 8.

Gate charge vs. gate-emitter

voltage

Figure 9.

Capacitance variations

AM07875v1

0.9

0.95

1.05

1.1

1.15

-50

100

150

VCES

(norm)

TJ (

°C)

IC = 1 mA

AM07876v1

0.6

0.7

0.8

0.9

1.1

1.2

-50

100

150

VGE(th)

(norm)

TJ (

°C)

VGE = VCE

IC = 250 µA

AM07877v1

VGE (V)

QG (nC)

VCC = 480 V

IC = 5 A

AM07878v1

200

400

600

800

010

304050

C (pF)

VCE (V)

f = 1 MHz

VGE = 0

Cies

Coes

Cres

Figure 10.

Switching losses vs. temperature

Figure 11.

Switching losses vs. gate

resistance

AM07879v1

100

200

300

400

500

600

100

125

E (µJ)

TJ (

°C)

VCC = 480 V, VGE= 15 V

IC = 5 A, RG =10

EON

EOFF

AM07880v1

100

200

300

400

500

600

040

120

160

200

E (µJ)

RG (

Ω)

VCC = 480 V, VGE = 15 V

IC = 5 A, TJ 125

°C

EON

EOFF

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Product(s)

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