STGWA40H65FB datasheet(4/21 Pages) STMICROELECTRONICS

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Electrical characteristics

STGFW40H65FB, STGW40H65FB,

STGWA40H65FB, STGWT40H65FB

4/21

DocID025171 Rev 7

Electrical characteristics

TC = 25 °C unless otherwise specified

Table 4: Static characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)CES

Collector-emitter breakdown

voltage

VGE = 0 V, IC = 2 mA

650

VCE(sat)

Collector-emitter saturation

voltage

VGE = 15 V, IC = 40 A

1.6

VGE = 15 V, IC = 40 A,

TJ = 125 °C

1.7

VGE = 15 V, IC = 40 A,

TJ = 175 °C

1.8

VGE(th)

Gate threshold voltage

VCE = VGE, IC = 1 mA

ICES

Collector cut-off current

VGE = 0 V, VCE = 650 V

µA

IGES

Gate-emitter leakage current

VCE = 0 V, VGE = ±20 V

±250

Table 5: Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Cies

Input capacitance

VCE= 25 V, f = 1 MHz,

VGE = 0 V

5412

Coes

Output capacitance

198

Cres

Reverse transfer

capacitance

107

Total gate charge

VCC = 520 V, IC = 40 A,

VGE = 0 to 15 V

(see Figure 28: "Gate charge

test circuit")

210

Qge

Gate-emitter charge

Qgc

Gate-collector charge

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