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STGWA40H65FB Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGWA40H65FB
Description  Trench gate field-stop IGBT, HB series 650 V, 40 A high speed
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA40H65FB Datasheet(HTML) 5 Page - STMicroelectronics

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STGFW40H65FB, STGW40H65FB,
STGWA40H65FB, STGWT40H65FB
Electrical characteristics
DocID025171 Rev 7
5/21
Table 6: Switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5
Ω
(see Figure 27: "Test circuit
for inductive load switching" )
-
40
-
ns
tr
Current rise time
-
13
-
(di/dt)on
Turn-on current slope
-
2413
-
A/µs
td(off)
Turn-off delay time
-
142
-
ns
tf
Current fall time
-
27
-
Eon(1)
Turn-on switching energy
-
498
-
µJ
Eoff(2)
Turn-off switching energy
-
363
-
Ets
Total switching energy
-
861
-
td(on)
Turn-on delay time
VCE = 400 V, IC = 40 A,
VGE = 15 V, RG = 5
Ω,
TJ = 175 °C
(see Figure 27: "Test circuit
for inductive load switching" )
-
38
-
ns
tr
Current rise time
-
14
-
(di/dt)on
Turn-on current slope
-
2186
-
A/µs
td(off)
Turn-off delay time
-
141
-
ns
tf
Current fall time
-
61
-
Eon(1)
Turn-on switching energy
-
1417
-
µJ
Eoff(2)
Turn-off switching energy
-
764
-
Ets
Total switching energy
-
2181
-
Notes:
(1)Including the reverse recovery of the external diode. The diode is the same of the co-packed STGW40H65DFB.
(2)Including the tail of the collector current.



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