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STGWA25H120DF2 Datasheet(PDF) 3 Page - STMicroelectronics |
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STGWA25H120DF2 Datasheet(HTML) 3 Page - STMicroelectronics |
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3 / 17 page ![]() DocID023752 Rev 4 3/17 STGW25H120DF2, STGWA25H120DF2 Electrical ratings 17 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VCES Collector-emitter voltage (VGE = 0) 1200 V IC Continuous collector current at TC = 25 °C 50 A Continuous collector current at TC = 100 °C 25 A ICP (1) 1. Pulse width limited by maximum junction temperature. Pulsed collector current 100 A VGE Gate-emitter voltage ±20 V IF Continuous collector current at TC = 25 °C 50 A Continuous collector current at TC = 100 °C 25 A IFP (1) Pulsed forward current 100 A PTOT Total dissipation at TC = 25 °C 375 W TJ Operating junction temperature – 55 to 175 °C TSTG Storage temperature range – 55 to 150 Table 3. Thermal data Symbol Parameter Value Unit RthJC Thermal resistance junction-case IGBT 0.4 °C/W RthJC Thermal resistance junction-case diode 1.47 °C/W RthJA Thermal resistance junction-ambient 50 °C/W |
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