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STGWA25H120DF2 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STGWA25H120DF2
Description  Trench gate field-stop IGBT, H series 1200 V, 25 A high speed
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STGWA25H120DF2 Datasheet(HTML) 5 Page - STMicroelectronics

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DocID023752 Rev 4
5/17
STGW25H120DF2, STGWA25H120DF2
Electrical characteristics
17
Table 6. IGBT switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on delay time
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
see Figure 28
-29
-
ns
tr
Current rise time
-
12
-
ns
(di/dt)on
Turn-on current slope
-
1774
-
A/µs
td(off)
Turn-off delay time
130
-
ns
tf
Current fall time
-
106
-
ns
Eon
(1)
1.
Energy losses include reverse recovery of the external diode.
Turn-on switching losses
-
0.6
-
mJ
Eoff
(2)
2.
Turn-off losses include also the tail of the collector current.
Turn-off switching losses
-
0.7
-
mJ
Ets
Total switching losses
-
1.3
-
mJ
td(on)
Turn-on delay time
VCE = 600 V, IC = 25 A,
RG = 10 Ω, VGE = 15 V,
TJ = 175 °C, see Figure 28
-
27.5
-
ns
tr
Current rise time
-
13.5
-
ns
(di/dt)on
Turn-on current slope
-
1522
-
A/µs
td(off)
Turn-off delay time
-
139
-
ns
tf
Current fall time
-
200
-
ns
Eon
(1)
Turn-on switching losses
-
1.05
-
mJ
Eoff
(2)
Turn-off switching losses
-
1.65
-
mJ
Ets
Total switching losses
-
2.7
-
mJ
tsc
Short-circuit withstand time
VCE = 600 V, VGE = 15 V,
TJ = 150 °C,
5-
µs
Table 7. Diode switching characteristics (inductive load)
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
trr
Reverse recovery time
IF = 25 A, VR = 600 V,
di/dt=500 A/µs
, VGE = 15 V,
see Figure 28
-303
-
ns
Qrr
Reverse recovery charge
-
0.93
-
µC
Irrm
Reverse recovery current
-
15.3
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-400
-
A/µs
Err
Reverse recovery energy
-
0.52
-
mJ
trr
Reverse recovery time
IF = 25 A, VR = 600 V,
di/dt=500 A/µs
, VGE = 15 V,
TJ = 175 °C, see Figure 28
-508
-
ns
Qrr
Reverse recovery charge
-
2.71
-
µC
Irrm
Reverse recovery current
-
23
-
A
dIrr/ /dt
Peak rate of fall of reverse
recovery current during tb
-680
-
A/µs
Err
Reverse recovery energy
-
1.56
-
mJ



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