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STL13N60M2 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL13N60M2 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID026363 Rev 2 5/16 STL13N60M2 Electrical characteristics 16 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 300 V, I D = 5.5 A, R G = 4.7 Ω , V GS = 10 V (see Figure 14 and 19) -11 - ns t r Rise time - 10 - ns t d(off) Turn-off delay time - 41 - ns t f Fall time - 9.5 - ns Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 7 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 28 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage V GS = 0, I SD = 7 A - 1.6 V t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 60 V (see Figure 16) -297 ns Q rr Reverse recovery charge - 2.8 μC I RRM Reverse recovery current - 18.5 A t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 60 V, T j =150 °C (see Figure 16) -394 ns Q rr Reverse recovery charge - 3.8 μC I RRM Reverse recovery current - 19 A |
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