This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to

change without notice.

July 2013

DocID023031 Rev 3

1/16

STL17N65M5

N-channel 650 V, 0.338

Ω typ., 10 A MDmesh™ V Power MOSFET

in a PowerFLAT™ 8x8 HV package

Figure 1. Internal schematic diagram

Features

• Worldwide best R

DS(on)

* area

• Higher V

DSS

rating and high dv/dt capability

• Excellent switching performance

Applications

• Switching applications

Description

This device is an N-channel MDmesh™ V Power

MOSFET based on an innovative proprietary

vertical process technology, which

is combined

with STMicroelectronics’ well-known

PowerMESH™ horizontal layout structure. The

resulting product has extremely low on-

resistance, which is unmatched among silicon-

based Power MOSFETs, making it especially

suitable for applications which require superior

power density and outstanding efficiency.

Order code

I

D

STL17N65M5

710 V

0.374

Ω

10 A

(1)

1.

The value is rated according to R

thj-case

and limited by

package

Table 1. Device summary

Order code

Marking

Package

Packaging

STL17N65M5

17N65M5

PowerFLAT™ 8x8 HV

Tape and reel

www.st.com