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STL17N65M5 Datasheet(PDF) 5 Page - STMicroelectronics |
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STL17N65M5 Datasheet(HTML) 5 Page - STMicroelectronics |
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5 / 16 page ![]() DocID023031 Rev 3 5/16 STL17N65M5 Electrical characteristics 16 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(v) Voltage delay time V DD = 400 V, I D = 6 A, R G = 4.7 Ω, V GS = 10 V (see Figure 16 and 19) -30 - ns t r(v) Voltage rise time - 8 - ns t f(i) Current fall time - 11 - ns t c(off) Crossing time - 12.5 - ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 10 A I SDM (1) 1. Pulse width limited by safe operating area Source-drain current (pulsed) - 40 A V SD (2) 2. Pulsed: pulse duration = 300 μs, duty cycle 1.5% Forward on voltage I SD = 11 A, V GS = 0 - 1.5 V t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 100 V (see Figure 16) -247 ns Q rr Reverse recovery charge - 2.4 μC I RRM Reverse recovery current - 19.5 A t rr Reverse recovery time I SD = 11 A, di/dt = 100 A/μs V DD = 100 V, T j = 150 °C (see Figure 16) -312 ns Q rr Reverse recovery charge - 3 μC I RRM Reverse recovery current - 19 A |
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