P30N10 datasheet(5/13 Pages) STMICROELECTRONICS

Part #	P30N10

Description	N-channel 100 V, 0.02 Ω typ., 32 A STripFET™ F7 Power MOSFET in a TO-220 package

PDF	13 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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5 / 13 page

STP30N10F7

Electrical characteristics

DocID028799 Rev 1

5/13

Table 7: Source-drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

VSD

(1)

Forward on

voltage

ISD = 32 A, VGS = 0 V

1.1

trr

Reverse

recovery time

ISD = 32 A, di/dt = 100 A/µs

VDD= 80 V, TJ= 150 °C, Figure 15: "Test

circuit for inductive load switching and

diode recovery times"

Qrr

Reverse

recovery

charge

IRRM

Reverse

recovery

current

2.3

Notes:

(1)Pulsed: pulse duration = 300 μs, duty cycle 1.5%.

2.1

Electrical characteristics (curves)

Figure 2: Safe operating area

Figure 3: Thermal impedance

Figure 4: Output characteristics

Figure 5: Transfer characteristics

0.1

VDS(V)

(A)

100µs

1ms

10ms

0.01

Tj=175°C

Tc=25°C

Single pulse

100 Operation in this area is

limited by RDS(on)

0.05

0.02

0.01

0.1

0.2

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