STQ3N45K3-AP datasheet(3/14 Pages) STMICROELECTRONICS

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STQ3N45K3-AP

Electrical ratings

Table 2. Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

450

VGS

Gate- source voltage

± 30

Drain current (continuous) at TC = 25 °C

0.6

IDM

(1)

Pulse width limited by safe operating area.

Drain current (pulsed)

2.4

PTOT

Total dissipation at TC = 25 °C

IAR

(2)

Pulse width limited by Tj max.

Avalanche current, repetitive or not-repetitive

0.6

EAS

(3)

Starting Tj = 25 °C, ID = IAR, VDD = 50 V.

Single pulse avalanche energy

(starting Tj = 25°C, ID = IAR, VDD = 50V)

dv/dt (4)

ISD ≤ 0.6 A, di/dt ≤ 400 A/µs, VDS peak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.

Peak diode recovery voltage slope

V/ns

Vesd(g-s) G-S ESD (HBM C = 100 pF, R = 1.5 k

Ω)1000

Tstg

Storage temperature

-55 to 150

°C

Max. operating junction temperature

150

°C

Table 3. Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-ambient

°C/W

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