DocID024887 Rev 1

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STQ3N45K3-AP

Electrical characteristics

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The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max

Unit

Turn-on delay time

(see Figure 15)

-6.5

-

ns

Rise time

-

5.4

-

ns

Turn-off-delay time

-

17

-

ns

Fall time

-

22

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Source-drain current

-

0.6

A

(1)

1.

Pulse width limited by safe operating area.

Source-drain current (pulsed)

-

2.4

A

(2)

2.

Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.

Forward on voltage

-

1.5

V

Reverse recovery time

-175

ns

Reverse recovery charge

-

550

nC

Reverse recovery current

-

6

A

Reverse recovery time

(see Figure 20)

-185

ns

Reverse recovery charge

-

600

nC

Reverse recovery current

-

6.5

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

Gate-source breakdown

voltage

30

-

-

V