STW23N85K5 datasheet(3/13 Pages) STMICROELECTRONICS

3 / 13 page

STW23N85K5

Electrical ratings

DocID023547 Rev 3

3/13

Electrical ratings

Table 2: Absolute maximum ratings

Symbol

Parameter

Value

Unit

VGS

Gate-source voltage

±30

Drain current (continuous) at Tcase = 25 °C

Drain current (continuous) at Tcase = 100 °C

12.4

IDM

(1)

Drain current (pulsed)

250

PTOT

Total dissipation at Tcase = 25 °C

250

dv/dt

(2)

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

-55 to 150

°C

Operating junction temperature

Notes:

(1)

Pulse width is limited by safe operating area.

(2)

ISD

≤ 19 A, di/dt=100 A/μs; VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS.

Table 3: Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case

0.5

°C/W

Rthj-amb

Thermal resistance junction-ambient

Table 4: Avalanche characteristics

Symbol

Parameter

Value

Unit

IAR

(1)

Avalanche current, repetitive or not repetitive

EAS

(2)

Single pulse avalanche energy

200

Notes:

(1)

Pulse width limited by Tjmax.

(2)

starting Tj = 25 °C, ID = IAR, VDD = 50 V.

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