T405T-6FP datasheet(2/9 Pages) STMICROELECTRONICS

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Characteristics

T405T-6FP

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DocID029919 Rev 1

Characteristics

Table 2: Absolute maximum ratings (limiting values)

Symbol

Parameter

Value

Unit

IT(RMS)

RMS on-state current (full sine wave)

Tc = 104 °C

ITSM

Non repetitive surge

peak on-state current

(full sine cycle)

tp = 16.7 ms

Tj initial = 25 °C

tp = 20 ms

I2t

I2t value for fusing

tp = 10 ms

Tj initial = 25 °C

5.1

A2s

dl/dt

Critical rate of rise of on-

state current

IG = 2 x IGT,

≤ 100 ns

f = 120 Hz

A/µs

IGM

Peak gate current

tp = 20 µs

Tj = 125 °C

PGM

Maximum gate power

dissipation

Tstg

Storage junction temperature range

-40 to +150

°C

Operating junction temperature range

-40 to +125

°C

Maximum lead temperature for soldering during 10 s

260

°C

Vins

Insulation RMS voltage (60 seconds)

2000

Table 3: Static electrical characteristics

Symbol

Test conditions

Value

Unit

VTM

ITM = 5.5 A, tp = 380 µs

25 °C

Max.

1.56

VTO

threshold on-state voltage

125 °C

Max.

0.9

Dynamic resistance

125 °C

Max.

100

mΩ

IDRM

IRRM

VD = VDRM, VR = VRRM

25 °C

Max.

µA

125 °C

Max.

Table 4: Dynamic characteristics

Symbol

Parameter

Quadrant

Value

Unit

IGT(1)

VD = 12 V, RL

= 30 Ω

I - II - III

25 °C

Max.

VGT

Max.

1.3

VGD

VD = VDRM, RL

= 3.3 kΩ

125 °C

Min.

0.2

IG = 1.2 x IGT

25 °C

Max.

ITM = 100 mA

Max.

dV/dt(2)

VD = VR = 402 V, gate open

125 °C

Min.

V/µs

(dl/dt)c(2)

(dV/dt)c = 0.1 V/µs

Min.

1.8

A/ms

Notes:

(1)Minimum IGT is guaranteed at 5 % of IGT max.

(2)For both polarities of A2 referenced to A1

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