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STM8S105C4 Datasheet(PDF) 72 Page - STMicroelectronics |
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STM8S105C4 Datasheet(HTML) 72 Page - STMicroelectronics |
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72 / 121 page ![]() Electrical characteristics STM8S105x4/6 72/121 DocID14771 Rev 15 10.3.5 Memory characteristics RAM and hardware registers Flash program memory/data EEPROM memory Table 35. RAM and hardware registers Symbol Parameter Conditions Min Unit VRM Data retention mode(1) 1. Minimum supply voltage without losing data stored in RAM (in halt mode or under reset) or in hardware registers (only in halt mode). Guaranteed by design, not tested in production. Halt mode (or reset) VIT-max(2) 2. Refer to Section 10.3: Operating conditions for the value of VIT-max. V Table 36. Flash program memory/data EEPROM memory Symbol Parameter Conditions Min(1) 1. Data based on characterization results, not tested in production. Typ Max Unit VDD Operating voltage (all modes, execution/write/erase) fCPU≤ 16 MHz 2.95 - 5.5 V tprog Standard programming time (including erase) for byte/word/block (1 byte/4 byte/128 byte) -- 6 6.6 ms Fast programming time for 1 block (128 byte) -- 3 3.33 terase Erase time for 1 block (128 byte) - - 3 3.33 NRW Erase/write cycles (program memory)(2) 2. The physical granularity of the memory is 4 byte, so cycling is performed on 4 byte even when a write/erase operation addresses a single byte. TA = +85 °C 10k - - cycle Erase/write cycles (data memory)(2) TA = +125 °C 300k 1M - tRET Data retention (program and data memory) after 10k erase/write cycles at TA= +55 °C TRET = 55 °C 20 - - year Data retention (data memory) after 300k erase/write cycles at TA= +125°C TRET = 85 °C 1 - - IDD Supply current (Flash programming or erasing for 1 to 128 byte) -- 2 - mA |
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