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STM32F410RB Datasheet(PDF) 68 Page - STMicroelectronics |
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STM32F410RB Datasheet(HTML) 68 Page - STMicroelectronics |
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68 / 142 page ![]() Electrical characteristics STM32F410x8/B 68/142 DocID028094 Rev 5 Table 29. Typical and maximum current consumption in Sleep mode - VDD = 1.7 V Symbol Parameter Conditions fHCLK (MHz) Voltage scale PLL VCO (MHz)(1) Typ Max(2) Unit TA= 25 °C TA = 25 °C TA = 85 °C TA = 105 °C TA = 125 °C IDD Supply current in Sleep mode All peripherals enabled(3) (4), External clock, PLL ON, Flash memory in Deep power down mode 100 S1 200 7.7 7,9 8,8 9,2 10.0 mA 84 S2 168 6.2 6,4 7,1 7,5 8.3 64 S3 128 4.3 4,5 5,0 5,3 6.1 50 S3 100 3.4 3,6 4,0 4,4 5.2 25 S3 100 2.0 2,1 2,4 2,7 3.5 20 S3 160 1.8 1,9 2,3 2,6 3.4 All peripherals enabled(3)(4), HSI, PLL OFF, Flash memory in Deep power down mode 16 S3 off 1.1 1,2 1,5 1,9 2.7 1 S3 off 0.3 0,4 0,7 1,0 1.8 All peripherals enabled(3)(4), External clock, PLL ON, Flash memory ON 100 S1 200 8.1 8,4 9,3 9,7 10.5 84 S2 168 6.6 6,8 7,5 7,9 8.7 64 S3 128 4.7 4,8 5,4 5,7 6.5 50 S3 100 3.8 3,9 4,4 4,7 5.5 25 S3 100 2.3 2,4 2,7 3,1 3.9 20 S3 160 2.1 2,2 2,6 2,9 3.7 All peripherals enabled(3)(4), HSI, PLL OFF, Flash memory ON 16 S3 off 1.4 1,5 1,8 2,2 3.0 1 S3 off 0.5 0,6 1,0 1,3 2.0 |
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