STM32L100RB datasheet(67/103 Pages) STMICROELECTRONICS

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STM32L100C6 STM32L100R8/RB

Electrical characteristics

6.3.9

Memory characteristics

The characteristics are given at TA = -40 to 85 °C unless otherwise specified.

RAM memory

Flash memory and data EEPROM

Table 33. RAM and hardware registers

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

VRM

Data retention mode(1)

1. Minimum supply voltage without losing data stored in RAM (in Stop mode or under Reset) or in hardware

registers (only in Stop mode).

STOP mode (or RESET)

1.8

Table 34. Flash memory and data EEPROM characteristics

Symbol

Parameter

Conditions

Min

Typ

Max(1)

1. Guaranteed by design.

Unit

VDD

Operating voltage

Read / Write / Erase

1.8

3.6

tprog

Programming / erasing time for

byte / word / double word / half-

page

Erasing

3.28

3.94

Programming

3.28

3.94

IDD

Average current during whole

program/erase operation

TA = 25 °C, VDD = 3.6 V

-300

µA

Maximum current (peak) during

program/erase operation

-1.5

2.5

Table 35. Flash memory, data EEPROM endurance and data retention

Symbol

Parameter

Conditions

Value

Unit

Min(1)

1. Guaranteed by characterization results.

Typ Max

NCYC(2)

Cycling (erase / write)

Program memory

TA = -40°C to

85 °C

kcycles

Cycling (erase / write)

EEPROM data memory

100

tRET(2)

2. Characterization is done according to JEDEC JESD22-A117.

Data retention (program memory) after

1 kcycle at TA = 85 °C

TRET = +85 °C

years

Data retention (EEPROM data memory)

after 100 kcycles at TA = 85 °C

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