MDF8N60BTH datasheet(1/6 Pages) MGCHIP

Part #	MDF8N60BTH

Description	N-Channel MOSFET 600V, 8A, 1.05(ohm)

PDF	6 Pages

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Manufacturer	MGCHIP [MagnaChip Semiconductor.]

Direct Link	http://www.magnachip.co.kr

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1 / 6 page

Jan. 2012 Version 1.0

MagnaChip Semiconductor Ltd

.

1

Absolute Maximum Ratings (Ta = 25

oC)

Characteristics

Symbol

Rating

Unit

Drain-Source Voltage

VDSS

600

V

Gate-Source Voltage

VGSS

±30

V

Continuous Drain Current(※)

TC=25

oC

ID

8.0*

A

TC=100

oC

4.9*

A

Pulsed Drain Current

(1)

IDM

32*

A

Power Dissipation

TC=25

oC

PD

46

W

W/

oC

Derate above 25

oC

0.37

Repetitive Avalanche Energy

(1)

EAR

4.6

mJ

Peak Diode Recovery dv/dt

(3)

dv/dt

4.5

V/ns

Single Pulse Avalanche Energy

(4)

EAS

320

mJ

Junction and Storage Temperature Range

TJ, Tstg

-55~150

oC

※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics

Symbol

Rating

Unit

Thermal Resistance, Junction-to-Ambient

(1)

RθJA

62.5

oC/W

Thermal Resistance, Junction-to-Case

(1)

RθJC

2.71

S

D

G

MDF8N60B

N-Channel MOSFET 600V, 8A, 1.05Ω

Ω

General Description

These N-channel MOSFET are produced using advanced

MagnaChip’s MOSFET Technology, which provides low on-

state resistance, high switching performance and excellent

quality.

These devices are suitable device for SMPS, high Speed

switching and general purpose applications.

Features

VDS = 600V

ID = 8.0A

@ VGS = 10V

RDS(ON) ≤ 1.05

@ VGS = 10V

Applications

Power Supply

PFC

High Current, High Speed Switching

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