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NAND256-A Datasheet(PDF) 27 Page - STMicroelectronics |
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NAND256-A Datasheet(HTML) 27 Page - STMicroelectronics |
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27 / 57 page ![]() 27/57 NAND128-A, NAND256-A, NAND512-A, NAND01G-A Block Erase Erase operations are done one block at a time. An erase operation sets all of the bits in the ad- dressed block to ‘1’. All previous data in the block is lost. An erase operation consists of three steps (refer to Figure 19.): 1. One bus cycle is required to setup the Block Erase command. 2. Only three bus cycles for 512Mb and 1Gb devices, or two for 128Mb and 256Mb devices are required to input the block address. The first cycle (A0 to A7) is not required as only addresses A14 to A26 (highest address depends on device density) are valid, A9 to A13 are ignored. In the last address cycle I/O2 to I/O7 must be set to VIL. 3. One bus cycle is required to issue the confirm command to start the P/E/R Controller. Once the erase operation has completed the Sta- tus Register can be checked for errors. Figure 19. Block Erase Operation Reset The Reset command is used to reset the Com- mand Interface and Status Register. If the Reset command is issued during any operation, the op- eration will be aborted. If it was a program or erase operation that was aborted, the contents of the memory locations being modified will no longer be valid as the data will be partially programmed or erased. If the device has already been reset then the new Reset command will not be accepted. The Ready/Busy signal goes Low for tBLBH4 after the Reset command is issued. The value of tBLBH4 depends on the operation that the device was per- forming when the command was issued, refer to Table 21. for the values. I/O RB Block Address Inputs SR0 ai07593 D0h 70h 60h Block Erase Setup Code Confirm Code Read Status Register Busy tBLBH3 (Erase Busy time) |
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