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ESDA8V2-1J Datasheet(PDF) 3 Page - STMicroelectronics

Part # ESDA8V2-1J
Description  EOS and ESD Transil™ protection for charger and battery port
PDF  7 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

ESDA8V2-1J Datasheet(HTML) 3 Page - STMicroelectronics

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ESDA8V2-1J
Characteristics
Doc ID 15646 Rev 1
3/7
Figure 2.
Relative variation of peak pulse
power versus initial junction
temperature
Figure 3.
Peak pulse power versus
exponential pulse duration
P
PP[T j initial] / PPP [T j initial=25°C]
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
0
25
50
75
100
125
150
Tj(°C)
PPP(W)
1
10
100
1000
10000
1
10
100
1000
T
j initial = 25 °C
tP(µs)
Figure 4.
Clamping voltage versus peak
pulse current (typical values,
exponential waveform)
Figure 5.
Forward voltage drop versus peak
forward current (typical values)
IPP(A)
0.1
1.0
10.0
100.0
8
1012141618
T
p = 8/20 µs
T
j initial =25 °C
VCL(V)
I
FM(A)
I
FM(A)
1.0E-02
1.0E-01
1.0E+00
1.0E+01
0.4
0.60.8
1.0
1.2
1.4
1.6
T
j =125 °C
T
j =25 °C
VFM(V)
VFM(V)
Figure 6.
Junction capacitance versus
reverse voltage applied (typical
values)
Figure 7.
Relative variation of leakage
current versus juntion temperature
(typical values)
C (pF)
0
50
100
150
200
250
01
234
56
78
F=1 MHz
V
OSC=30 mVRMS
T
j=25 °C
Vline (V)
1
10
100
25
50
75
100
125
I
R [Tj]/IR [Tj=25°C]
V
R =5V
Tj(°C)



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