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PCF5079 Datasheet(PDF) 11 Page - NXP Semiconductors

Part # PCF5079
Description  Dual-band power amplifier controller for GSM, PCN and DCS
PDF  28 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

PCF5079 Datasheet(HTML) 11 Page - NXP Semiconductors

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2001 Nov 21
11
Philips Semiconductors
Product specification
Dual-band power amplifier controller for
GSM, PCN and DCS
PCF5079
8
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Where
and the thermal resistance between junction and ambient Rth(j-a) = 206.3 K/W.
2. Where Rth(j-a) = 77 K/W on JEDEC 2S2P board (100 × 100 mm).
3. Human body model: C = 100 pF; R = 1.5 k
Ω.
4. Machine model: C = 200 pF; L = 0.75
µH; R = 0 Ω.
9
ELECTROSTATIC DISCHARGE (ESD)
The PCF5079 is compliant to the General Quality Specification for integrated circuits
“SNW-FQ-611D” under the stress
condition EDSH (human body) and the stress condition ESDM (machine model).
10 DC CHARACTERISTICS
VDD = 2.5 to 5 V; Tamb = −40 to +85 °C; unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDD
supply voltage
2.5
+6.0
V
VI
DC input voltage on all pins except VS1 and VS2
−0.5 VDD + 0.5 V
VVS1,
VVS2
DC input voltage on pins VS1 and VS2
−3.0 VDD + 0.5 V
II
DC current into any signal pin
−10
+10
mA
Ptot
total power dissipation
TSSOP10 package
−
315(1)
mW
HVSON10 package
−
844(2)
mW
Ves
electrostatic handling voltage
human body model; note 3 2000
−
V
machine model; note 4
pins 4 and 5
150
−
V
all other pins
200
−
V
Tstg
storage temperature
−65
+150
°C
Tamb
ambient temperature
−40
+85
°C
SYMBOL
PARAMETER
CONDITION
MIN.
TYP.
MAX.
UNIT
Supply
VDD
supply voltage
2.5
3.6
5.0
V
IDD(op)
total operating current
no load on pins VCD or VCG
−−
10
mA
IDD(idle)
total idle current
no load on pins VCD or VCG;
note 1
−−
10
µA
Logic inputs (pins PU and BS)
VIL
LOW-level input voltage
0
−
0.3
V
VIH
HIGH-level input voltage
VDD = 2.5 to 3.7 V
0.9
−
VDD
V
VDD = 3.7 to 5.0 V
0.95
−
VDD
V
ILL
LOW-level input leakage current
VIL =0V
−5
−
+5
µA
P
tot
T
j
T
amb
–
R
th(j-a)
-----------------------
=



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