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P30NS15LFP Datasheet(PDF) 3 Page - STMicroelectronics

Part # P30NS15LFP
Description  N-CHANNEL 150V - 0.085 W - 10A TO-220FP MESH OVERLAY??POWER MOSFET
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

P30NS15LFP Datasheet(HTML) 3 Page - STMicroelectronics

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STP30NS15LFP
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(
•)Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VDD = 75 V
ID = 5 A
RG = 4.7 Ω
VGS = 4.5 V
(Resistive Load, Figure 1)
25
95
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD=120V ID=10A VGS=5V
(see test circuit, Figure 2)
40
7.5
20
54
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off Delay Time
Fall Time
VDD = 75 V
ID = 5 A
RG = 4.7Ω,
VGS = 5 V
(Resistive Load, Figure 1)
55
30
ns
ns
tr(Voff)
tf
tc
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp = 120 V
ID = 10 A
RG = 4.7Ω,
VGS = 4.5 V
(Inductive Load, Figure 3)
15
30
50
ns
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
ISDM (•)
Source-drain Current
Source-drain Current (pulsed)
10
40
A
A
VSD (*)
Forward On Voltage
ISD = 10 A
VGS = 0
1.3
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 10 A
di/dt = 100A/µs
Vr = 30 V
Tj = 150°C
(Inductive Load, Figure 3)
160
950
12
ns
nC
A
ELECTRICAL CHARACTERISTICS (continued)
Safe Operating Area
Thermal Impedance



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