US5881LSO datasheet(2/6 Pages) ETC

2 / 6 page

US5881 CMOS Multi-Purpose Switch

3901005881 Rev 5.0

24/July/01

Page 2

US5881

CMOS Multi-Purpose Switch

US5881 Electrical Specifications

Parameter

Symbol Test Conditions

Min

Typ

Max

Units

Supply Voltage

VDD

Operating

3.5

Supply Current

IDD

B<BRP

1.5

2.5

4.0

Saturation Voltage

VDS(on)

IOUT = 20 mA, B>BOP

0.4

0.5

Output Leakage

IOFF

B<BRP, VOUT = 20V

0.01

5.0

ì A

Output Rise Time

VDD = 12V, RL = 1.1KÙ, CL = 20pf

0.04

ì s

Output Fall Time

VDD = 12V, RL = 1.1KÙ, CL = 20pf

0.18

ì s

US5881 Magnetic Specification s

Parameter

Symbol Test Conditions

Min

Typ

Max

Units

Operating Point3

BOP

Release Point

BRP

9.5

Hysteresis

Bhys

2.0

4.3

5.5

Melexis Inc. reserves the right to make changes without further notice to any products herein to improve reliability, function o r design. Melexis does

not assume any liability arising from the use of any product or application of any product or circuit described herein.

Notes:

1. 1 mT = 10 Gauss.

2. The SOT-23 device is reversed from the UA package. The SOT-23 output transistor will be switched

on (BOP) in the presence of a sufficiently strong North pole magnetic field subjected to the

markedface.

3. At –40ºC, maximum BOP = 35 mT.

Supply Voltage (Operating), VDD

24V

Supply Current (Fault), IDD

50mA

Output Voltage, VOUT

24V

Output Current (Fault), IOUT

50mA

Power Dissipation, PD

100mW

Operating Temperature Range, TA

-40°C to 150°C

Storage Temperature Range, TS

-65°C to 150°C

Maximum Junction Temp, TJ

175°C

ESD Sensitivity (All Pins)

+/- 4KV

Absolute Maximum Ratings

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