ACEDC6904B datasheet(2/7 Pages) ACE

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ACEDC6904B

N-Channel Enhancement Mode Power MOSFET

VER 1.1

Ordering information

ACEDC6904B XX + H

Electrical Characteristics

TA=25℃, unless otherwise specified.

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown

Voltage

V(BR)DSS

VGS = 0V, ID = 250μA

Zero Gate Voltage Drain Current

IDSS1

VDS = 20V, VGS = 0V

μA

Gate Threshold Voltage

VGS(TH)

VGS = VDS , IDS= 250μA

1.2

1.6

2.2

Gate Leakage Current

IGSS

VGS= ±20V , VDS=0V

±100

Drain-Source On-state

Resistance

RDS(on)

VGS = 10V , ID= 10A

mΩ

VGS = 4.5V , ID= 8A

Forward Trans Conductance

gFS

VDS= 10V , ID= 6A

11.7

Diode Forward Voltage

VSD

ISD= 1A , VGS= 0V

Diode Forward Current

Switching

Total Gate Charge

VDS= 30V, ID= 10A,

VGS= 10V

39.2

Gate-Source Charge

Qgs

5.9

Gate-Drain Charge

Qgd

8.5

Turn-on Delay Time

td( on )

VDD=10V,ID= 1A,

VGS= 10V,RG= 6Ω

9.6

Turn-on Rise Time

28.2

Turn-off Delay Time

td( off )

45.3

Turn-off Fall Time

10.9

Dynamic

Input Capacitance

Ciss

VDS=25V,VGS= 0V,

f= 1.0MHz

2100

3050

Output Capacitance

Coss

165

240

Reverse Transfer Capacitance

Crss

120

Gate resistance

VGS=0V, VDS=0V, F=1MHz

1.6

3.2

PD: PDFN3*3-8L

NN: DFN3*3-8L

Pb - free

Halogen - free

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