R5F100GD datasheet(122/202 Pages) RENESAS

122 / 202 page

RL78/G13

2. ELECTRICAL SPECIFICATIONS (TA = -40 to +85

C)

Page 122 of 196

R01DS0131EJ0330 Rev.3.30

Mar 31, 2016

2.8 Flash Memory Programming Characteristics

(TA =

40 to +85C, 1.8 V  VDD  5.5 V, VSS = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

CPU/peripheral hardware clock

frequency

fCLK

1.8 V

 VDD  5.5 V

MHz

Number of code flash rewrites

Notes 1, 2, 3

Retained for 20 years

TA = 85

C

1,000

Retained for 1 years

TA = 25

C

1,000,000

Retained for 5 years

TA = 85

C

100,000

Number of data flash rewrites

Notes 1, 2, 3

Cerwr

Retained for 20 years

TA = 85

C

10,000

Times

Notes 1. 1 erase + 1 write after the erase is regarded as 1 rewrite.

The retaining years are until next rewrite after the rewrite.

2. When using flash memory programmer and Renesas Electronics self programming library

3. These are the characteristics of the flash memory and the results obtained from reliability testing by

Renesas Electronics Corporation.

2.9 Dedicated Flash Memory Programmer Communication (UART)

(TA =

40 to +85C, 1.8 V  EVDD0 = EVDD1  VDD  5.5 V, VSS = EVSS0 = EVSS1 = 0 V)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Transfer rate

During serial programming

115,200

1,000,000

bps

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