FESE8XT datasheet(2/5 Pages) VISHAY

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FESE8xT

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Vishay General Semiconductor

Revision: 23-Feb-16

Document Number: 87916

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Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS SYMBOL FESE8AT FESE8BT FESE8CT FESE8DT FESE8FT FESE8GT FESE8HT FESE8JT UNIT

Max. instantaneous



forward voltage (1)

8.0 A

0.95

1.3

1.5

Max. DC reverse



current at rated DC



blocking voltage

TC = 25 °C

μA

TC = 100 °C

500

Max. reverse



recovery time

IF = 0.5 A, IR = 1.0 

Irr = 0.25 A

trr

Typical junction



capacitance

4.0 V, 1 MHz

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL FESE8AT

FESE8BT

FESE8CT FESE8DT

FESE8FT

FESE8GT FESE8HT

FESE8JT

UNIT

Typical thermal resistance

from junction to case

RJC

2.2

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AC

FESE8JT-E3/45

1.80

50/tube

Tube

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