FESE16XT datasheet(2/5 Pages) VISHAY

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FESE16xT

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Vishay General Semiconductor

Revision: 23-Feb-16

Document Number: 87918

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Note

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

FESE

16AT

FESE

16BT

FESE

16CT

FESE

16DT

FESE

16FT

FESE

16GT

FESE

16HT

FESE

16JT

UNIT

Maximum instantaneous forward

voltage

16 A

VF (1)

0.975

1.30

1.50

Maximum DC reverse current at

rated DC blocking voltage

TC = 25 °C

μA

TC = 100 °C

500

Maximum reverse recovery time

IF = 0.5 A, IR = 1.0 A,

Irr = 0.25 A

trr

Typical junction capacitance

4.0 V, 1 MHz

175

145

THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

FESE

16AT

FESE

16BT

FESE

16CT

FESE

16DT

FESE

16FT

FESE

16GT

FESE

16HT

FESE

16JT

UNIT

Typical thermal resistance, junction to case

RJC

1.2

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

TO-220AC

FESE16JT-E3/45

1.78

50/tube

Tube

FESE16XT Datasheet(PDF) 2 Page - Vishay Siliconix

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