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SSG9435J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH |
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SSG9435J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH |
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1 / 3 page  Elektronische Bauelemente SSG9435J -5.1A, -30V, RDS(ON) 60 mΩ Ω Ω Ω P-Ch Enhancement Mode Power MOSFET 10-Feb-2017 Rev. C Page 1 of 3 http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. A H B M D C J K F L E N G Q9435 RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION These miniature surface mount MOSFETs utilize High Cell Density process. Low RDS(on) assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. FEATURES Low RDS(on) provides higher efficiency and extends battery life Miniature SOP-8 Surface Mount Package Saves Board Space High power and current handling capability Extended VGS range for battery pack applications APPLICATION PWMDC-DC converters, power management in portable and battery-powered products such as computers, printers, battery charger, telecommunication power system, and telephones power system. MARKING PACKAGE INFORMATION Package MPQ Leader Size SOP-8 4K 13 inch MAXIMUM RATINGS (T A=25°C unless otherwise specified) Parameter Symbol Rating Unit Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -5.1 A Pulsed Drain Current IDM -20 A Single Pulsed Avalanche Energy 1 EAS 20 mJ Power Dissipation PD 1.4 W Thermal Resistance from Junction to Ambient RθJA 89 °C / W Lead Temperature for Soldering Purposes@1/8’’ from case for 10s TL 260 °C Operating Junction and Storage Temperature Range TJ, TSTG 150, -55 ~ 150 °C Notes: 1. VDD= -50V,L=0.5mH, RG=25 , Starting TJ=25°C. SOP-8 Millimeter Millimeter REF. Min. Max. REF. Min. Max. A 5.80 6.20 H 0.35 0.49 B 4.80 5.00 J 0.375 REF. C 3.80 4.00 K 45° D 0° 8° L 1.35 1.75 E 0.40 0.90 M 0.10 0.25 F 0.19 0.25 N 0.25 REF. G 1.27 TYP. S S S G D D D D Date Code |
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