SSG9435J datasheet(2/3 Pages) SECOS

2 / 3 page

Elektronische Bauelemente

SSG9435J

-5.1A, -30V, RDS(ON) 60 mΩ

Ω

P-Ch Enhancement Mode Power MOSFET

10-Feb-2017 Rev. C

Page 2 of 3

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

ELECTRICAL CHARACTERISTICS (T

A=25°C unless otherwise specified)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Off Characteristics

Drain-Source Breakdown Voltage

V(BR)DSS

-30

VGS=0, ID= -250µA

Zero Gate Voltage Drain Current

IDSS

-1

µA

VDS= -24V, VGS=0

Gate-Body Leakage Current

IGSS

±100

VDS=0, VGS= ±20V

On Characteristics

Gate-Threshold Voltage

VGS(th)

-1

-2

VDS=VGS, ID= -250µA

VGS= -10V, ID= -4.6A

VGS= -6V, ID= -4.1A

Drain-Source On-Resistance

RDS(ON)

105

VGS= -4.5V,ID= -2 A

Forward Transconductance

gfs

VDS= -15V, ID= -4.6A

Dynamic Characteristics

Total Gate Charge

Gate-Source Charge

Qgs

Gate-Drain Charge

Qgd

6.3

ID= -4.6A

VDS= -15V

VGS= -10V

Turn-On Delay Time

Td(on)

Rise Time

Turn-Off Delay Time

Td(off)

120

Fall Time

100

VDD= -15V

ID= -1A

VGEN= -10V

RL=15

RG=6

Gate Resistance

5.8

f=1MHz, VDS=VDS=0

Drain-Source Diode Characteristics

Diode Forward Voltage

VSD

-1.2

IS= -2.6A, VGS=0

Continuous Drain-Source Diode

Forward Current

-5.1

Pulsed Drain-Source Diode

Forward Current

ISM

-20

Notes:

Pulse Test: Pulse width

≤300µs, duty cycle≤2%.

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