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SSI3439J Datasheet(PDF) 1 Page - SeCoS Halbleitertechnologie GmbH

Part # SSI3439J
Description  N & P-Ch Enhancement Mode Power MOSFET
PDF  4 Pages
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Manufacturer  SECOS [SeCoS Halbleitertechnologie GmbH]
Direct Link  http://www.secosgmbh.com
Logo SECOS - SeCoS Halbleitertechnologie GmbH

SSI3439J Datasheet(HTML) 1 Page - SeCoS Halbleitertechnologie GmbH

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Elektronische Bauelemente
SSI3439J
-Ch: 0.75A, 20V, RDS(O ) 380 m
P-Ch: -0.66A, -20V, RDS(O ) 520 m
& P-Ch Enhancement Mode Power MOSFET
06-Apr-2017 Rev. A
Page 1 of 4
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
RoHS Compliant Product
A Suffix of “-C” specifies halogen & lead-free
DESCRIPTION
SSI3439J is N and P Channel enhancement MOS Field
Effect Transistor. It uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge.
This device is suitable for the use in DC-DC conversion, load
switch and level shift.
FEATURES
Surface mount package
Low RDS(ON)
ESD-protecting gate
APPLICATIONS
Load/power switching
Interfacing switching
Battery management for Ultra small portable electronics
MARKING
PACKAGE INFORMATION
Package
MPQ
Leader Size
SOT-563
3K
7 inch
MAXIMUM RATINGS (T
A=25°C unless otherwise specified)
Part Number
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
VDS
20
-20
V
Typical Gate-Source Voltage
VGS
±12
V
Continuous Drain Current
1
ID
0.75
-0.66
A
Pulsed Drain Current@ tp=10µs
IDM
1.8
-1.2
A
Thermal Resistance from Junction to Ambient
1
RθJA
833
°C/ W
Lead Temperature for Soldering Purposes
@1/8’’ from case for 10s
TL
260
°C
Junction and Storage Temperature Range
TJ, TSTG
150, -55~150
°C
SOT-563
49K
E
F
J
B
C
D
G
A
H
Millimeter
Millimeter
REF.
Min.
Max.
REF.
Min.
Max.
A
1.50
1.70
F
0.09
0.16
B
1.50
1.70
G
0.45
0.55
C
0.525
0.60
H
0.17
0.27
D
1.10
1.30
J
0.10
0.30
E
-
0.05


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