Elektronische Bauelemente

SSI3439J

& P-Ch Enhancement Mode Power MOSFET

06-Apr-2017 Rev. A

Page 2 of 4

http://www.SeCoSGmbH.com/

Any changes of specification will not be informed individually.

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test Condition

Static Characteristics

N-Ch

20

-

-

Drain-Source Breakdown Voltage

P-Ch

-20

-

-

V

N-Ch

-

-

1

Zero Gate Voltage Drain Current

P-Ch

-

-

-1

uA

N-Ch

-

-

±20

Gate-Source Leakage Current

P-Ch

-

-

±20

µA

N-Ch

0.35

-

1.1

Gate-Threshold Voltage

2

P-Ch

-0.35

-

-1.1

V

N-Ch

-

-

380

P-Ch

-

-

520

N-Ch

-

-

450

P-Ch

-

-

700

N-Ch

-

-

800

Drain-Source On Resistance

2

P-Ch

-

950

-

m

N-Ch

-

1.6

-

Forward Transfer conductance

2

P-Ch

-

1.2

-

S

N-Ch

-

-

1.2

Diode Forward Voltage

P-Ch

-

-

-1.2

V

Dynamic Characteristics

N-Ch

-

79

-

Input Capacitance

P-Ch

-

113

-

N-Ch

-

13

-

Output Capacitance

P-Ch

-

15

-

N-Ch

-

9

-

Reverse Transfer Capacitance

P-Ch

-

9

-

pF

f=1MHz

f=1MHz

Switching Characteristics

3

N-Ch

-

6.7

-

Turn-on Delay Time

P-Ch

-

9

-

N-Ch

-

4.8

-

Rise Time

P-Ch

-

5.8

-

N-Ch

-

17.3

-

Turn-off Delay Time

P-Ch

-

32.7

-

N-Ch

-

7.4

-

Fall Time

P-Ch

-

20.3

-

nS

N-Ch:

P-Ch:

Notes:

1.

The surface of the device is mounted on a FR4 board using recommended minimum pad size.

2.

Pulse Test: Pulse width=300µs, duty cycle≦2%.

3.

Switching characteristics are independent from the operating junction temperature.