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EC736014AT Datasheet(PDF) 1 Page - E-CMOS Corporation

Part # EC736014AT
Description  60V 60A N-Channel
PDF  6 Pages
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Manufacturer  E-CMOS [E-CMOS Corporation]
Direct Link  http://www.ecmos.com.tw/
Logo E-CMOS - E-CMOS Corporation

EC736014AT Datasheet(HTML) 1 Page - E-CMOS Corporation

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EC736014
60V 、
、
、
、60A N-Channel
E-CMOS Corp. (www.ecmos.com.tw)
Page 1 of 6
6B18N-Rev.F001
Description
The EC736014 is a new generation of middle voltage and high current N–Channel enhancement mode trench power
MOSFET. This new technology increases the device reliability and electrical parameter repeatability. EC736014 is assembled
in high reliability and qualified assembly house.
Features and Benefits
Advanced trench process technology
avalanche energy, 100% test
Fully characterized avalanche voltage and current
Application
Power switching application
Absolute Maximum Ratings
Parameter
Max.
Units
ID@Tc=25ْ C
Continuous drain current,VGS@10V
60
ID@Tc=100ْC
Continuous drain current,VGS@10V
42
IDM
Pulsed drain current
①
240
A
PD@TC=25ْC
Power dissipation
115
W
PD@TC=25ْC
Linear derating factor
0.74
W/ Cْ
VGS
Gate-to-Source voltage
±20
V
EAS
Single pulse avalanche energy
②
235
mJ
EAR
Repetitive avalanche energy
TBD
TJ
TSTG
Operating Junction and
Storage Temperature Range
–55 to +175
ْC
Thermal Resistance
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-case
—
1.31
—
RθJA
Junction-to-ambient
—
—
62
℃/W


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