EC732301

P chanel MOSFET

Page 2 of 6

5E06N-Rev.F001

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Continuous Source Current

(Body Diode)

—

—

-3 ①

A

MOSFET symbol

showing the

integral reverse

p-n junction diode.

Pulsed Source Current

(Body Diode)

—

—

-10

A

Diode Forward Voltage

—

-0.83

-1.2

V

Thermal Characteristics

Symbol

Characterizes

Typ.

Max.

Units

Junction-to-

—

100

°C /W

Electrical Characteristics (TA=25℃unless otherwise noted)

Symbol

Parameter

Min.

Typ.

Max.

Units

Conditions

Drain-to-Source breakdown voltage

-20

—

—

V

250μA

Static Drain-to-Source on-resistance

—

60

90

mΩ

Static Drain-to-Source on-resistance

—

85

115

Gate threshold voltage

-0.5

—

-1

V

250μA

Gate threshold voltage

—

-0.58

—

Drain-to-Source leakage current

—

—

-1

μA

Drain-to-Source leakage current

—

—

-50

Gate-to-Source forward leakage

—

—

100

nA

Gate-to-Source forward leakage

—

—

-100

Qg

Total gate charge

—

9.6

—

nC

Qgs

Gate-to-Source charge

—

1.1

—

Qgd

Gate-to-Drain("Miller") charge

—

2.6

—

td(on)

Turn-on delay time

—

9.7

—

ns

=3Ω

tr

Rise time

—

18

—

td(off)

Turn-Off delay time

—

25

—

tf

Fall time

—

31

—

Ciss

Input capacitance

—

490

—

pF

ƒ = 1MHz

Coss

Output capacitance

—

75

—

Crss

Reverse transfer capacitance

—

60

—

Source-Drain Ratings and Characteristics